Semiconductor device, method of making the same and liquid...

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...

Reexamination Certificate

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C257S064000, C257S065000, C257S066000, C257S069000, C257S070000, C257S347000, C257S072000, C257S059000, C257SE21413, C257SE21414, C257SE29117

Reexamination Certificate

active

07317207

ABSTRACT:
To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate.A TFT having higher electron mobility can be realized within the predetermined range of characteristic fluctuation by utilizing the semiconductor thin-film (called quasi single crystal thin-film) formed of poly-crystal grain joined with the {111} twin-boundary of Diamond structure as the channel region (namely, active region) of TFT.

REFERENCES:
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patent: 6291852 (2001-09-01), Yano et al.
patent: 6348368 (2002-02-01), Yamazaki et al.
patent: 6462723 (2002-10-01), Yamazaki et al.
patent: 6545294 (2003-04-01), Yamaguchi et al.
patent: 6608326 (2003-08-01), Shinagawa et al.
patent: 6956325 (2005-10-01), Yamazaki et al.

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