Electricity: measuring and testing – Magnetic – Magnetic information storage element testing
Reexamination Certificate
2011-08-02
2011-08-02
Patidar, Jay M (Department: 2858)
Electricity: measuring and testing
Magnetic
Magnetic information storage element testing
Reexamination Certificate
active
07990137
ABSTRACT:
An MR element having a magnetically free layer and a magnetic bias layer that applies a bias magnetic field to the magnetically free layer are included. Furthermore, a measuring section that measures a ferromagnetic resonance frequency f0of the magnetically free layer under a condition of applying a predetermined external magnetic field Hm to the magnetically free layer, and an operation section that computes the bias magnetic field Hb according to a following conditional expression (1):in-line-formulae description="In-line Formulae" end="lead"?Hb={(2*π*f0/γ)2/Ms}−(Hk+Hm) (1)in-line-formulae description="In-line Formulae" end="tail"?where γ is a gyroscope constant, Ms is a saturation magnetic field of the magnetically free layer, and Hk is a shape anisotropy magnetic field of the magnetically free layer.
REFERENCES:
patent: 6774626 (2004-08-01), Abe
patent: 7075294 (2006-07-01), Matsukuma et al.
patent: B2-3877386 (2007-02-01), None
Nazarov, Alexey V., et al., “Tunable ferromagnetic resonance peak in tunneling magnetoresistive sensor structures,” American Institute of Physics, Applied Physics Letters, vol. 81, No. 24, Dec. 9, 2002, pp. 4559-4561.
Oliff & Berridg,e PLC
Patidar Jay M
TDK Corporation
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