EUV light source

Radiant energy – Radiant energy generation and sources – With radiation modifying member

Reexamination Certificate

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C250S493100

Reexamination Certificate

active

07323703

ABSTRACT:
An apparatus and method is described which may comprise a plasma produced extreme ultraviolet (“EUV”) light source multilayer collector which may comprise a plasma formation chamber; a shell within the plasma formation chamber in the form of a collector shape having a focus; the shell having a sufficient size and thermal mass to carry operating heat away from the multilayer reflector and to radiate the heat from the surface of the shell on a side of the shell opposite from the focus. The material of the shell may comprise a material selected from a group which may comprise silicon carbide, silicon, Zerodur or ULE glass, aluminum, beryllium, molybdenum, copper and nickel. The apparatus and method may comprise at least one radiative heater directed at the shell to maintain the steady state temperature of the shell within a selected range of operating temperatures.

REFERENCES:
patent: 2759106 (1956-08-01), Wolter
patent: 3150483 (1964-09-01), Mayfield et al.
patent: 3232046 (1966-02-01), Meyer
patent: 3279176 (1966-10-01), Boden
patent: 3746870 (1973-07-01), Demarest
patent: 3960473 (1976-06-01), Harris
patent: 3961197 (1976-06-01), Dawson
patent: 3969628 (1976-07-01), Roberts et al.
patent: 4042848 (1977-08-01), Lee
patent: 4088966 (1978-05-01), Samis
patent: 4143275 (1979-03-01), Mallozzi et al.
patent: 4162160 (1979-07-01), Witter
patent: 4203393 (1980-05-01), Giardini
patent: 4504964 (1985-03-01), Cartz et al.
patent: 4536884 (1985-08-01), Weiss et al.
patent: 4538291 (1985-08-01), Iwamatsu
patent: 4596030 (1986-06-01), Herziger et al.
patent: 4618971 (1986-10-01), Weiss et al.
patent: 4626193 (1986-12-01), Gann
patent: 4633492 (1986-12-01), Weiss et al.
patent: 4635282 (1987-01-01), Okada et al.
patent: 4751723 (1988-06-01), Gupta et al.
patent: 4752946 (1988-06-01), Gupta et al.
patent: 4837794 (1989-06-01), Riordan et al.
patent: 5023897 (1991-06-01), Neff et al.
patent: 5027076 (1991-06-01), Horsley et al.
patent: 5102776 (1992-04-01), Hammer et al.
patent: 5126638 (1992-06-01), Dethlefsen
patent: 5142166 (1992-08-01), Birx
patent: 5313481 (1994-05-01), Cook et al.
patent: 5411224 (1995-05-01), Dearman et al.
patent: 5448580 (1995-09-01), Birx et al.
patent: 5504795 (1996-04-01), McGeoch
patent: 5729562 (1998-03-01), Birx et al.
patent: 5763930 (1998-06-01), Partlo
patent: 5866871 (1999-02-01), Birx
patent: 5936988 (1999-08-01), Partlo et al.
patent: 5963616 (1999-10-01), Silfvast et al.
patent: 6031241 (2000-02-01), Silfvast et al.
patent: 6039850 (2000-03-01), Schulz
patent: 6051841 (2000-04-01), Partlo
patent: 6064072 (2000-05-01), Partlo et al.
patent: 6172324 (2001-01-01), Birx
patent: 6195272 (2001-02-01), Pascente
patent: 6452199 (2002-09-01), Partlo et al.
patent: 6566667 (2003-05-01), Partlo et al.
patent: 6566668 (2003-05-01), Rauch et al.
patent: 6576912 (2003-06-01), Visser et al.
patent: 6586757 (2003-07-01), Melnychuk et al.
patent: 6590959 (2003-07-01), Kansaka et al.
patent: 6744060 (2004-06-01), Ness et al.
patent: 6804327 (2004-10-01), Schriever et al.
patent: 6815700 (2004-11-01), Melnychuk et al.
patent: 6822251 (2004-11-01), Arenberg et al.
patent: 6894298 (2005-05-01), Ahmad et al.
patent: 6904073 (2005-06-01), Yager et al.
patent: 7087914 (2006-08-01), Akins et al.
patent: 2006/0072084 (2006-04-01), Van Herpen et al.
Andreev, et al., “Enhancement of laser/EUV conversion by shaped laser pulse interacting with Li-containted targets for EUV lithography”, Proc. Of SPIE. 5196:128-136 (2004).
Apruzese, J.P., “X-Ray Laser Research Using Z Pinches,”Am. Inst. of Phys.399-403, (1994).
Bollanti, et al., “Compact Three Electrodes Excimer Laser IANUS for a POPA Optical System,”SPIE Proc.(2206)144-153, (1994).
Bollanti, et al., “Ianus, the three-electrode excimer laser,”App. Phys. B(Lasers&Optics) 66(4):401-406, (1998).
Choi, et al., “A 1013A/s High Energy Density Micro Discharge Radiation Source,”B. Radiation Characteristics,p. 287-290.
Choi, et al., “Fast pulsed hollow cathode capillary discharge device,”Rev. of Sci. Instrum,69(9):3118-3122 (1998).
Fomenkov, et al., “Characterization of a 13.5nm Source for EUV Lithography based on a Dense Plasma Focus and Lithium Emission.” Sematech Intl. Workshop on EUV Lithography (Oct. 1999).
Hansson, et al., “Xenon liquid jet laser-plasma source for EUV lithography,” Emerging Lithographic Technologies IV,Proc. Of SPIE, vol. 3997:729-732 (2000).
Kato, Yasuo, “Electrode Lifetimes in a Plasma Focus Soft X-Ray Source,”J. Appl. Phys.(33) Pt. 1, No. 8:4742-4744 (1991).
Kato, et al., “Plasma focus x-ray source for lithography,”Am. Vac. Sci. Tech. B.,6(1): 195-198 (1988).
Lebert, et al., “Soft x-ray emission of laser-produced plasmas using a low-debris cryogenic nitrogen target,”J. App. Phys.,84(6):3419-3421 (1998).
Lebert, et al., “A gas discharge based radiation source for EUV-lithography,” Intl.Conf. Micro and Nano-Engineering 98 (Sep. 22-24, 1998) Leuven, Belgium.
Lebert, et al., “Investigation of pinch plasmas with plasma parameters promising ASE,” Inst. Phys. Conf. Ser No. 125: Section 9, pp. 411-415 (1992) Schiersee, Germany.
Lebert, et al., “Comparison of laser produced and gas discharge based EUV sources for different applications,” Intl. Conf. Micro- and Nano-Engineering 98 (Sep. 22-24, 1998) Leuven, Belgium.
Lee, Ja H., “Production of dense plasmas in hypocyloidal pinch apparatus,”The Phys. Of Fluids,20(2):313-321 (1977).
Lewis, Ciaran L.S., “Status of Collision-Pumped X-ray Lasers,”Am Inst. Phys.pp. 9-16 (1994).
Malmqvist, et al., “Liquid-jet target for laser-plasma soft x-ray generation,”Am. Inst. Phys.67(12):4150-4153 1996).
Mather, et al., “Stability of the Dense Plasma Focus,”Phys. Of Fluids, 12(11):2343-2347 (1969).
Mayo, et al., “A magnetized coaxial source facility for the generation of energetic plasma flows,”Sci. Technol.vol. 4:pp. 47-55 (1994).
Mayo, et al., “Initial Results on high enthalpy plasma generation in a magnetized coaxial source,”Fusion Techvol. 26:1221-1225 (1994).
Nilsen, et al., “Analysis of resonantly photopumped Na-Ne x-ray-laser scheme,”Am Phys. Soc.44(7):4591-4597 (1991).
Orme, et al., “Electrostatic charging and deflection of nonconventional droplet streams formed from capillary stream breakup,”Physics of Fluids,12(9):2224-2235, (Sep. 2000).
Orme, et al., “Charged Molten Metal Droplet Deposition As a Direct Write Technology”, MRS 2000 Spring Meeting, San Francisco, (Apr. 2000).
Pant, et al., “Behavior of expanding laser produced plasma in a magnetic field,”Physica Sripta,T75:104-111, (1998).
Partlo, et al., “EUV (13.5nm) Light Generation Using a Dense Plasma Focus Device,”SPIE Proc. On Emerging Lithographic Technologies III.Vol. 3676, 846-858 (Mar. 1999).
Porter, et al., “Demonstration of Population Inversion by Resonant Photopumping in a Neon Gas Cell Irradiated by a Sodium Z Pinch,” Phys. Rev. Let., 68(6):796-799. (Feb. 1992).
Price, Robert H., “X-Ray Microscopy using Grazing Incidence Reflection Optics,”Am. Inst. Physl., pp. 189-199, (1981).
Qi, et al., “Flouorescence in Mg IX emission at 48.340 Å from Mg pinch plasmas photopumped by A1 X1 line radiation at 48.338 Å, ”The Am. Phys. Soc.,47(3):2253-2263 (Mar. 1993).
Scheuer, et al., “A Magnetically-Nozzled, Quasi-Steady, Multimegawatt, Coaxial Plasma Thruster,”IEEE:Transactions on Plasma Science,22(6) (Dec. 1994).
Schriever, et al., “Laser-produced lithium plasma as a narrow-band extended ultraviolet radiation source for photoelectron spectroscopy.” App. Optics, 37(7):1243-1248, (Mar. 1998).
Schriever, et al., “Narrowband laser produced extreme ultraviolet sources adapted to silicon/molybdenum multilayer optics” J of Ann Phys 83(9):4566-4571 (May 1998).
Silfvast, et al., “H

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