Method of fabricating high-gain transistors

Details Method of fabricating high-gain transistors Method of fabricating high-gain transistors

1976-07-15

1978-01-03

Ozaki, G.

Metal treatment

Compositions

Heat treating

148175, 148187, H01L 2126

Patent

active

040664732

ABSTRACT:
A method of fabricating bipolar transistors with increased gain. A base region is formed adjacent the collector (or emitter) region of the transistor, and a portion of the base region is then removed by etching. The emitter (or collector) is then formed by diffusing dopant into the base region where the portion has been removed, with the base region separating the emitter and collector having reduced thickness due to the etching. Advantageously, the base region may be formed with a more heavily-doped region overlying a less heavily-doped region, with a part of the more heavily-doped region removed by etching, thereby providing a highly conductive path to the lower conductivity base region separating the emitter and collector regions. The process steps are compatible with conventional integrated-circuit fabrication processes.

REFERENCES:
patent: 3755001 (1973-08-01), Kodi et al.
patent: 3808058 (1974-04-01), Henning
patent: 3933540 (1976-01-01), Kondo et al.
patent: 3962717 (1976-06-01), O'Brien
patent: 3996077 (1976-12-01), Verkuijlen

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