Program method of flash memory device

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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Details

C365S185180, C365S185170, C365S185030, C365S185240

Reexamination Certificate

active

07990771

ABSTRACT:
A method of erasing and programming a flash memory device including multi-level cells (MLCs). MLCs of a word line are selected and some of the MLCs are pre-programmed based on whether their individual threshold voltages are included in a first voltage range. The selected MLCs are pre-programmed with a pre-program (first) voltage; and the remaining MLCs are prohibited from pre-programming; then the remaining MLCs connected to the selected word line are programmed by applying a program (second) voltage that gradually rises from the pre-program voltage at a ratio of a step voltage n for the selected line.

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