Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-08-23
2011-08-23
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S207000, C257S208000, C257S211000, C257SE21016, C257SE21575, C257SE21627, C257SE21641
Reexamination Certificate
active
08004085
ABSTRACT:
A semiconductor device has an element interconnection2, a top-layer element interconnection4, a super-connect interconnection10and a bump7. The element interconnection2is provided on a semiconductor substrate1through a plurality of insulating layers50. The top-layer element interconnection4is formed above the element interconnection2by using a substantially equivalent process equipment. The super-connect interconnection10is provided on the top-layer element interconnection4through a super-connect insulating layer9having a thickness five or more times larger than that of the insulating layer5, and has a thickness three or more times larger than that of each the element interconnection2and the top-layer element interconnection4. The bump7is formed on the super-connect interconnection10. The top-layer element interconnection4has a signal pad4s, a power source pad4vand a ground pad4g. An area of the signal pad4sis smaller than each area of the power source pad4vand the ground pad4g.
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Kikuchi Katsumi
Kouta Hikaru
Sakai Jun
Yamamichi Shintaro
NEC Corporation
Soward Ida M
Sughrue & Mion, PLLC
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