Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate
2008-01-29
2008-01-29
Cao, Allen (Department: 2627)
Dynamic magnetic information storage or retrieval
Head
Magnetoresistive reproducing head
Reexamination Certificate
active
07324313
ABSTRACT:
Current-perpendicular-to-the-plane (CPP), current-in-to-the-plane (CIP), and tunnel valve type sensors are provided having an antiparallel (AP) coupled free layer structure, an in-stack biasing structure which stabilizes the AP coupled free layer structure and a nonmagnetic spacer layer formed between the in-stack biasing layer and the AP coupled free layer structure. The AP coupled free layer structure has a first AP coupled free layer adjacent to the nonmagnetic spacer layer, a second AP coupled free layer, and an antiparallel coupling (APC) layer formed between the first and the second AP coupled free layers. The net moment of the AP coupled free layer structure has an antiparallel edge magnetostatic coupling with the in-stack biasing structure. At the same time, the first AP coupled free layer has an antiparallel exchange coupling with the second AP coupled free layer. By forming the second AP coupled free layer with a thickness greater than a thickness of the first AP coupled free layer, the AP coupled free layer structure has a net magnetic moment in the direction of the second AP coupled free layer moment. The non-magnetic spacer layer is chosen so that first AP coupled free layer has a parallel interlayer (Neel or Orange-peel or positive exchange) coupling with the in-stack biasing structure, so that the interlayer coupling adds to the edge magnetostatic coupling to increase a stability of the AP coupled free layer structure.
REFERENCES:
patent: 6271997 (2001-08-01), Gill
patent: 6430014 (2002-08-01), Gill
patent: 6449134 (2002-09-01), Beach et al.
patent: 6473279 (2002-10-01), Smith et al.
patent: 6643915 (2003-11-01), Gill
patent: 6671139 (2003-12-01), Carey et al.
patent: 6704175 (2004-03-01), Li et al.
patent: 6967825 (2005-11-01), Gill
patent: 6985338 (2006-01-01), Gill
patent: 7075760 (2006-07-01), Gill
patent: 2001/0028537 (2001-10-01), Gill
patent: 2002/0067577 (2002-06-01), Beach et al.
patent: 2002/0141120 (2002-10-01), Gill
patent: 2002/0159201 (2002-10-01), Li et al.
patent: 2002/0163765 (2002-11-01), Gill
patent: 2003/0179513 (2003-09-01), Pinarbasi
patent: 2003/0227722 (2003-12-01), Freitag et al.
patent: 2003/0235016 (2003-12-01), Gill
patent: 2004/0006454 (2004-01-01), Gill
patent: 2004/0075953 (2004-04-01), Gill
“Priorartdatabase.com”, “Self-Pinned Dual with AP-Coupled Free Layer”, Oct. 24, 2002.
Childress Jeffrey Robinson
Fontana, Jr. Robert E.
Ho Kuok San
Tsang Ching Hwa
Cao Allen
Hitachi Global Storage Technologies - Netherlands B.V.
Oskorep, Esq. John J.
Zisas Matthew
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