Magnetic memory device and method of manufacturing the same

Details Magnetic memory device and method of manufacturing the same Magnetic memory device and method of manufacturing the same

2008-07-29

2008-07-29

Landau, Matthew C. (Department: 2815)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257S421000, C257SE27006, C257SE21665, C365S158000, C365S171000, C365S173000

Reexamination Certificate

active

07405087

ABSTRACT:
A magnetic memory device includes a first interconnection which runs in a first direction, a second interconnection which runs in a second direction different from the first direction, a magnetoresistive element which is arranged at the intersection of and between the first and second interconnections, and a metal layer which is connected to the magnetoresistive element and has a side surface that partially coincides with a side surface of the magnetoresistive element.

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