Semiconductor device and fabrication method thereof

Details Semiconductor device and fabrication method thereof Semiconductor device and fabrication method thereof

2008-04-29

2008-04-29

Menz, Douglas M. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Ball or nail head type contact, lead, or bond

C257S774000, C257S698000

Reexamination Certificate

active

07365440

ABSTRACT:
A semiconductor device includes a second insulating film formed on a second surface of a semiconductor substrate whose first surface has been formed with a first insulating film and an electrode pad, and an opening is made in a portion of the second insulating film directly below the electrode pad. By using the second insulating film as a mask, a through hole is formed in the semiconductor substrate in such a manner that the through hole recedes from an opening edge of the first insulating film. A third insulating film is formed only on the inner wall of the through hole.

REFERENCES:
patent: 6791195 (2004-09-01), Urushima
patent: 2003/0080408 (2003-05-01), Farnworth et al.
patent: 2003/0151144 (2003-08-01), Muta et al.
patent: 2003/0190799 (2003-10-01), Kung et al.
patent: 2004/0063268 (2004-04-01), Noma et al.
patent: 2004/0124513 (2004-07-01), Ho et al.
patent: 3186941 (2001-05-01), None
patent: 2003-309221 (2003-10-01), None
patent: 530344 (2003-05-01), None
patent: 552694 (2003-09-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and fabrication method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and fabrication method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and fabrication method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2778848