Thin film capacitor

Details Thin film capacitor Thin film capacitor

2011-08-23

2011-08-23

Parker, Ken A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S534000, C257SE21008

Reexamination Certificate

active

08004064

ABSTRACT:
A thin film capacitor with a trench structure having a base substance and a pair of electrodes provided on the base substance, and a dielectrode provided between the electrodes. The trench pattern is configured to have a first pattern and a second pattern separate from the first pattern. The first pattern having a plurality of protrusions provided upright at predetermined intervals, and the second pattern separate from the first pattern having a plurality of recesses provided at predetermined intervals, are provided at the side of the base substance where the dielectric film is formed. Trenches are each defined by the outer wall of each protrusion and the inner wall of each recess.

REFERENCES:
patent: 6387750 (2002-05-01), Lai et al.
patent: 6646323 (2003-11-01), Dirnecker et al.
patent: 6825080 (2004-11-01), Hu et al.
patent: 7259516 (2007-08-01), Wan et al.
patent: 7544986 (2009-06-01), Rasmussen
patent: 2006/0194348 (2006-08-01), Araujo et al.
patent: 2007/0253143 (2007-11-01), Goldberger et al.
patent: A 6-325970 (1994-11-01), None

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