Semiconductor chip with metallization levels, and a method...

Details Semiconductor chip with metallization levels, and a method... Semiconductor chip with metallization levels, and a method...

2008-07-01

2008-07-01

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to conductive state

C438S600000, C438S622000, C257SE21595

Reexamination Certificate

active

07393721

ABSTRACT:
A metallization surface (5), which acts as an etching stop layer during the production of openings (4) in a passivation layer (3) applied to its upper face and protects an interconnect structure (6) arranged underneath it, is arranged in an uppermost metallization level (1). A further opening is produced in the metal surface (5), through which a focused ion beam is aimed at the interconnect structure (6) in order to connect interconnects to one another and/or to interrupt at least one interconnect. The wiring of the integrated circuit can thus be varied individually, starting from identically produced semiconductor chips.

REFERENCES:
patent: 4916514 (1990-04-01), Nowak
patent: 5793095 (1998-08-01), Harvey
patent: 5904556 (1999-05-01), Suzuki et al.
patent: 5923960 (1999-07-01), Harvey
patent: 5933704 (1999-08-01), Hwang et al.
patent: 6069076 (2000-05-01), Takahashi
patent: 6197621 (2001-03-01), Harvey
patent: 6458630 (2002-10-01), Daubenspeck et al.
patent: 2002/0182837 (2002-12-01), Daubenspeck et al.
patent: 2003/0205816 (2003-11-01), Janke
patent: WO 90/03046 (1990-03-01), None

Affiliated with

Also associated with

Rating

Semiconductor chip with metallization levels, and a method... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor chip with metallization levels, and a method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor chip with metallization levels, and a method... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2769609