Semiconductor device

Details Semiconductor device Semiconductor device

2011-03-22

2011-03-22

Maldonado, Julio J (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S774000, C257S775000, C257S786000, C257SE23143, C257SE23145, C257SE23151, C257SE23152, C257SE23153, C257SE23168

Reexamination Certificate

active

07911063

ABSTRACT:
In a semiconductor device according to an aspect of the invention, a direction in which a fourth metal interconnection layer located on a semiconductor layer is extended is orthogonal to a direction in which third interconnection layers ML30and ML37located on the fourth interconnection layer are extended. Thus, even in a case where a stress is applied from outside to bonding pads BP1and BP2located above, the stress is wholly dispersed by the third interconnection layers and the fourth interconnection layer which are laminated to intersect with each other, and stress concentration on a particular point can be relieved to restrain deterioration in semiconductor device strength to a minimum. Accordingly, it is possible to provide the semiconductor device having a structure in which productivity of the semiconductor device can be improved while the stress concentration applied from outside on the particular point of the bonding pad is relieved.

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