Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2008-07-22
2008-07-22
Tsai, H. Jey (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S295000, C257SE21665
Reexamination Certificate
active
07402879
ABSTRACT:
The present invention provides a method of fabricating a portion of a memory cell, the method comprising providing a first conductor in a trench which is provided in an insulating layer and flattening an upper surface of the insulating layer and the first conductor, forming a material layer over the flattened upper surface of the insulating layer and the first conductor and flattening an upper portion of the material layer while leaving intact a lower portion of the material layer over the insulating layer and the first conductor.
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patent: 2002/0098705 (2002-07-01), Low
Drewes Joel A.
Yates Donald L.
Dickstein & Shapiro LLP
Micro)n Technology, Inc.
Tsai H. Jey
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