Low power multiple bit sense amplifier

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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Details

C365S185170, C365S185190, C365S185200, C365S189050, C365S191000

Reexamination Certificate

active

07324381

ABSTRACT:
A sense amplifier for multiple level flash memory cells is comprised of a voltage ramp generator that generates a ramp voltage signal. Reference sense amplifiers compare an input reference current to a ramp current generated from the ramp voltage signal. When the ramp voltage signal is greater than the reference current, an output latch signal is toggled. A sense amplifier compares an input bit line current to a threshold and outputs a logical low when the bit line current goes over the threshold. The sense amplifier output is latched into one of three digital latches at a time determined by the latch signals. An encoder encodes the data from the three digital latches into two bits of output data.

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patent: 1 467 377 (2004-10-01), None
patent: 1 699 054 (2006-09-01), None
patent: WO 96/10256 (1996-04-01), None

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