Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-01-29
2008-01-29
Pham, Ly Duy (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185170, C365S185190, C365S185200, C365S189050, C365S191000
Reexamination Certificate
active
07324381
ABSTRACT:
A sense amplifier for multiple level flash memory cells is comprised of a voltage ramp generator that generates a ramp voltage signal. Reference sense amplifiers compare an input reference current to a ramp current generated from the ramp voltage signal. When the ramp voltage signal is greater than the reference current, an output latch signal is toggled. A sense amplifier compares an input bit line current to a threshold and outputs a logical low when the bit line current goes over the threshold. The sense amplifier output is latched into one of three digital latches at a time determined by the latch signals. An encoder encodes the data from the three digital latches into two bits of output data.
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Gallo Girolamo
Marotta Giulio G.
Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
Pham Ly Duy
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