GaN compound semiconductor light emitting element and method...

Details GaN compound semiconductor light emitting element and method... GaN compound semiconductor light emitting element and method...

2011-08-30

2011-08-30

Nguyen, Thinh T (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S028000, C438S038000, C438S039000, C257S098000, C257S099000, C257SE21158

Reexamination Certificate

active

08008101

ABSTRACT:
The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact. Furthermore, a P-type electrode is partially formed on a P-GaN layer in a mesh form to thereby maximize the emission of photons generated in the active layer toward the N-GaN layer.

REFERENCES:
patent: 5585648 (1996-12-01), Tischler
patent: 6740906 (2004-05-01), Slater et al.
patent: 6744071 (2004-06-01), Sano
patent: 6794690 (2004-09-01), Uemura
patent: 2003/0141506 (2003-07-01), Sano et al.
patent: 2003/0189212 (2003-10-01), Yoo
patent: 2004/0207320 (2004-10-01), Erchak
patent: 2004/0235210 (2004-11-01), Tamura
patent: 6-350132 (1994-12-01), None
patent: 11340514 (1999-12-01), None
patent: 2003-046139 (2003-02-01), None
patent: 2004-095959 (2004-03-01), None
patent: 2004-119981 (2004-04-01), None
patent: 2004-179491 (2004-06-01), None
patent: 2004-281863 (2004-10-01), None
patent: 2005-084634 (2005-03-01), None
patent: 03-065464 (2003-08-01), None
Jeffrey S. Velson “Research and Manufacturing Synergies Between LEDs and PV” in NCPV and Solar Program Review Meeting Proceedings 2003, p. 319-338 see Latest Nichai Structure, State-of-Art in AlinGaN Chops in p. 330.
Notice of Allowance issued on Feb. 25, 2011 in co-pending U.S. Appl. No. 11/577,710.
Non-Final Office Action dated Jun. 24, 2010 in U.S. Appl. No. 11/577,710.
Final Office Action dated Nov. 29, 2010, issued in co-pending U.S. Appl. No. 11/577,710.
Jeffrey S. Nelson “Research and Manufacturing Synergies Between LEDs and PV” in NCPV and Solar Program Review Meeting Proceedings, Mar. 24-26, 2003; p. 319-338 (see State-of-the-Art in AIInGaN Chips, p. 330).
Notice of Allowance of U.S. Appl. No. 12/769,614 issued on Jun. 1, 2011.
Notice of Allowance of U.S. Appl. No. 13/073,783 issued on Jun. 27, 2011.

Affiliated with

Also associated with

Rating

GaN compound semiconductor light emitting element and method... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with GaN compound semiconductor light emitting element and method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and GaN compound semiconductor light emitting element and method... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2763712