Bipolar transistor with depleted emitter

Details Bipolar transistor with depleted emitter Bipolar transistor with depleted emitter

2011-03-22

2011-03-22

Menz, Douglas M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With emitter region having specified doping concentration...

C257S197000

Reexamination Certificate

active

07911033

ABSTRACT:
This invention discloses a novel apparatus of fully depleted emitter so that the built-in potential between emitter and the base becomes lower and the charge storage between the emitter and base becomes small. This concept also applies to the diodes or rectifiers. With depleted junction, this results in very fast switching of the diodes and transistors. Another novel structure utilizes the strip base structure to achieve lower on resistance of the bipolar transistor. The emitter region of the strip base can be a normal emitter or depleted emitter.

REFERENCES:
patent: 4259680 (1981-03-01), Lepselter et al.
patent: 4483726 (1984-11-01), Isaac et al.
patent: 4581319 (1986-04-01), Wieder et al.
patent: 4729965 (1988-03-01), Tamaki et al.
patent: 5024957 (1991-06-01), Harame et al.
patent: 5098854 (1992-03-01), Kapoor et al.
patent: 5101256 (1992-03-01), Harame et al.

Affiliated with

Also associated with

Rating

Bipolar transistor with depleted emitter does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bipolar transistor with depleted emitter, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bipolar transistor with depleted emitter will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2762481