Three-dimensional cascaded power distribution in a...

Details Three-dimensional cascaded power distribution in a... Three-dimensional cascaded power distribution in a...

2008-07-22

2008-07-22

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S777000, C257SE27026

Reexamination Certificate

active

07402854

ABSTRACT:
An IC structure having reduced power loss and/or noise includes two or more active semiconductor regions stacked in a substantially vertical dimension, each active semiconductor region including an active layer. The IC structure further includes two or more voltage supply planes, each of the voltage supply planes corresponding to a respective one of the active layers.

REFERENCES:
patent: 5440249 (1995-08-01), Schucker et al.
patent: 5764082 (1998-06-01), Taylor
patent: 5848101 (1998-12-01), Taylor
patent: 5850153 (1998-12-01), Harris et al.
patent: 5862390 (1999-01-01), Ranjan
patent: 6320228 (2001-11-01), Yu
patent: 6509725 (2003-01-01), Bernstein et al.
patent: 2003/0173673 (2003-09-01), Val
patent: 2005/0014311 (2005-01-01), Hayasaka et al.
patent: 2006/0249812 (2006-11-01), Sakurabayashi et al.
patent: 2006/0256964 (2006-11-01), Gu et al.
patent: 2007/0297156 (2007-12-01), Hosomi

Affiliated with

Also associated with

Rating

Three-dimensional cascaded power distribution in a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Three-dimensional cascaded power distribution in a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Three-dimensional cascaded power distribution in a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2761961