Methods for programming a floating body nonvolatile memory

Details Methods for programming a floating body nonvolatile memory Methods for programming a floating body nonvolatile memory

2008-04-01

2008-04-01

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S185280

Reexamination Certificate

active

07352631

ABSTRACT:
A technique to speed up the programming of a non-volatile memory device that has a floating body actively removes holes from the floating body that have accumulated after performing hot carrier injection (HCI). The steps of HCI and active hole removal can be alternated until the programming is complete. The active hole removal is faster than passively allowing holes to be removed, which can take milliseconds. The active hole removal can be achieved by reducing the drain voltage to a negative voltage and reducing the gate voltage as well. This results in directly withdrawing the holes from the floating body to the drain. Alternatively, reducing the drain voltage while maintaining current flow stops impact ionization while sub channel current collects the holes. Further alternatively, applying a negative gate voltage causes electrons generated by band to band tunneling and impact ionization near the drain to recombine with holes.

REFERENCES:
patent: 5578865 (1996-11-01), Vu et al.
patent: 5691552 (1997-11-01), Oyama
patent: 6049484 (2000-04-01), Lee et al.
patent: 6313487 (2001-11-01), Kencke et al.
patent: 6429055 (2002-08-01), Oh
patent: 6495887 (2002-12-01), Krishnan et al.
patent: 6548356 (2003-04-01), Lui et al.
patent: 6614694 (2003-09-01), Yeh et al.
patent: 6937516 (2005-08-01), Fazan et al.
patent: 6969662 (2005-11-01), Fazan et al.
patent: 6982918 (2006-01-01), Fazan et al.
patent: 7170807 (2007-01-01), Fazan et al.
patent: 2006/0186456 (2006-08-01), Burnett et al.
T. Ohno, M. Takahaski, A. Ohtaka, Y. Sakakibara, and T. Tsuchiya “Suppression of the Parasitic Bipolar Effect in Ultra-Thin-Film nMOSFETs/SIMOX by Ar ion Implantation into Source/Drain Regions” IEEE IEDM 1995, pp. 627-630.
M. Yoshimi, M. Terauchi, A. Murakoshi, M. Takahashi, K. Matsuzawa, N. Shigyo, and Y. Ushiku “Technology Trends of Silion-On-Insulator—Its Advantages and Problems to be Solved” IEEE IEDM 1994, pp. 429-432.
A. Nishiyama, O. Arisumi, and M. Yoshimi “Suppression of the Floating-Body-Effect in Partially-Depleted SOI MOSFET's with SiGe Source Structure and its Mechanism” IEEE. Trans. Elec. Dev., vol. 44, No. 12, Dec. 1997, pp. 2187-2192.
J.H. Sim, C.H. Choi, and K. Kim “Elimination of Parasitic Bipolar-Induced Breakdown Effects in Ultra-Thin SOI MOSFET's Using Narrow-Bandgap-Source (NBS) Structure” IEEE TRans. Elec. Dev., vol. 42, No. 8, Aug. 1995, pp. 1495-1502.
Okhonin, S. et al.; “A Capacitor-Less IT DRAM Cell”; IEEE Electron Device Letters; Feb. 2002; pp. 85-87; vol. 23, No. 2; IEEE.
Date, Celisa K. et al.; “Suppression of the Floating-Body Effect Using SiGe Layers in Vertical Surrounding-Gate MOSFETs”; IEEE Transactions on Electron Devices; Dec. 2001; pp. 2684-2689; vol. 48, No. 12; IEEE.
Ohno, Terukazu et al.; “Suppression of Parasitic Bipolar Action in Ultra-Thin-Film Fully-Depleted CMOS/SIMOX Devices by Ar-Ion Implantation into Source/Drain Regions”; IEEE Transactions on Electron Devices; May 1998; pp. 1071-1076; vol. 45, No. 5; IEEE.
Yoshimi, Makoto et al.; “Suppression of the Floating-Body Effect in SOI MOSFET's by the Bandgap Engineering Method Using a Si1-xGexSource Structure”; IEEE Transactions on Electron Devices; Mar. 1997; pp. 423-430; vol. 44, No. 3; IEEE.

Affiliated with

Also associated with

Rating

Methods for programming a floating body nonvolatile memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for programming a floating body nonvolatile memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for programming a floating body nonvolatile memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2761503