Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2011-08-30
2011-08-30
Dang, Phuc (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S086000, C257S098000
Reexamination Certificate
active
08008673
ABSTRACT:
A light-emitting device1includes a base2and a light-emitting element3that is disposed on the base2. The light-emitting element3is made up of a plurality of semiconductor layers including a light-emitting layer, and at the same time, is covered with a wavelength converting portion4that includes a wavelength converting material. The light-emitting layer emits primary light, and the wavelength converting material absorbs part of the primary light and emits secondary light. The luminance of the primary light emitted from the edge portion of the light extraction surface of the light-emitting device3is higher than the luminance of the primary light emitted from the inner region located inside the edge portion, and the ratio of the primary light and the secondary light that are emitted from a light extraction surface6of the wavelength converting portion4is substantially uniform across the light extraction surface6of the wavelength converting portion4. Thereby, a light color difference across the light extraction surface of the wavelength converting portion that covers the light-emitting element can be reduced further, and it is possible to irradiate an irradiation surface with light of uniform color.
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Dang Phuc
Hamre Schumann Mueller & Larson P.C.
Panasonic Corporation
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