Semiconductor device with bipolar and CMOS transistors

Details Semiconductor device with bipolar and CMOS transistors Semiconductor device with bipolar and CMOS transistors

1989-04-26

1992-03-03

James, Andrew J.

357 35, 357 42, 357 44, 357 88, 357 90, H01L 2702, H01L 2972

Patent

active

050937073

ABSTRACT:
A semiconductor device having CMOS transistors and bipolar transistors is disclosed. A P-type high concentration buried region is formed in the surface region of the semiconductor substrate. An N-type epitaxial layer is formed on the buried region. The semiconductor device includes a second well region of a PMOS transistor that is formed by introducing an N-type impurity into a part of the epitaxial layer, and a first well region of a bipolar transistor that is formed without introducing the N-impurity, after the formation of the epitaxial layer.

REFERENCES:
patent: 4799098 (1989-01-01), Ikeda et al.
patent: 4879255 (1989-11-01), Deguchi
patent: 4907058 (1990-03-01), Sakai
patent: 4929570 (1990-05-01), Howell
patent: 4963973 (1990-10-01), Watanabe et al.
patent: 4965220 (1990-10-01), Iwasaki
patent: 4980744 (1990-12-01), Watanabe et al.

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