Semiconductor device

Details Semiconductor device Semiconductor device

2011-08-09

2011-08-09

Pizarro, Marcos D (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S059000, C257S066000, C257S072000

Reexamination Certificate

active

07994502

ABSTRACT:
An object is to reduce off-current of a thin film transistor. Another object is to improve electric characteristics of a thin film transistor. Further, it is still another object to improve image quality of a display device using the thin film transistor. An aspect of the present invention is a thin film transistor including a semiconductor film formed over a gate electrode and in an inner region of the gate electrode which does not reach an end portion of the gate electrode, with a gate insulating film interposed therebetween, a film covering at least a side surface of the semiconductor film, and a pair of wirings over the film covering the side surface of the semiconductor film; in which an impurity element serving as a donor is added to the semiconductor film.

REFERENCES:
patent: 4409134 (1983-10-01), Yamazaki
patent: 5101242 (1992-03-01), Ikeda et al.
patent: 5221631 (1993-06-01), Ikeda et al.
patent: 5313075 (1994-05-01), Zhang et al.
patent: 5453858 (1995-09-01), Yamazaki
patent: 5514879 (1996-05-01), Yamazaki
patent: 5614732 (1997-03-01), Yamazaki
patent: 5644152 (1997-07-01), Rostoker et al.
patent: 5701167 (1997-12-01), Yamazaki
patent: 5849601 (1998-12-01), Yamazaki
patent: 5859445 (1999-01-01), Yamazaki
patent: 5909615 (1999-06-01), Kuo
patent: 6011277 (2000-01-01), Yamazaki
patent: 6023075 (2000-02-01), Yamazaki
patent: 6252249 (2001-06-01), Yamazaki
patent: 6281520 (2001-08-01), Yamazaki
patent: 6306213 (2001-10-01), Yamazaki
patent: 6737676 (2004-05-01), Yamazaki
patent: 7067844 (2006-06-01), Yamazaki
patent: 7098479 (2006-08-01), Yamazaki
patent: 7115902 (2006-10-01), Yamazaki
patent: 7205171 (2007-04-01), Luo et al.
patent: 7375372 (2008-05-01), Luo et al.
patent: 2002/0145143 (2002-10-01), Kawasaki et al.
patent: 2006/0033106 (2006-02-01), Seo et al.
patent: 2006/0124930 (2006-06-01), Chen et al.
patent: 2006/0246638 (2006-11-01), Asami et al.
patent: 2007/0018165 (2007-01-01), Yamazaki
patent: 2008/0061295 (2008-03-01), Wang et al.
patent: 2008/0142800 (2008-06-01), Arai et al.
patent: 58-092217 (1983-06-01), None
patent: 60-160170 (1985-08-01), None
patent: 62-067872 (1987-03-01), None
patent: 63-258072 (1988-10-01), None
patent: 02-218166 (1990-08-01), None
patent: 04-242724 (1992-08-01), None
patent: 06-326312 (1994-11-01), None
patent: 2005-049832 (2005-02-01), None

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