Single crystal material having high density dislocations...

Details Single crystal material having high density dislocations... Single crystal material having high density dislocations...

2008-05-20

2008-05-20

Kunemund, Robert (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from solid or gel state

Using heat

C117S003000, C117S004000, C117S006000, C117S950000, C257S009000, C257S014000

Reexamination Certificate

active

07374613

ABSTRACT:
Disclosed is a ceramic or metal single-crystal material having high-density dislocations arranged one-dimensionally on respective straight lines. The single-crystal material is produced by compressing a ceramic or metal single-crystal blank at a high temperature from a direction allowing the activation of a single slip to induce plastic deformation therein, and then subjecting the resulting product to a heat treatment. The single-crystal material can be used in a device for high-speed dislocation-pipe diffusion of ions or electrons. The single-crystal material can further be subjected to a diffusion treatment so as to diffuse a metal element from its surface along the dislocations to provide a single-crystal device with a specific electrical conductivity or a quantum wire device. Otherwise, the single-crystal material can be subjected to annealing or chemical etching so as to form nano-holes along the high-density dislocations to provide a thin film device, such as a molecular sieve film or a carbon-dioxide separating film.

REFERENCES:
Nakamura et al., “Dislocation Structure in Compressed A-AI2O3 single crystals”, Annual Report of Engineering Research Institute School of Engineering, University of Tokyo, vol. 59, p. 154-164 (2000).
Nakamura et al., English Translation of “Dislocation Structure in Compressed A-AI2O3 single crystals”, Annual Report of Engineering Research Institute School of Engineering, University of Tokyo, vol. 59, p. 159-164 (2000), pp. 1-16.
A. Nakamura et al.; Tokyo Daigaku Kogakubu Sogo Shinkensho Nenpo, vol. 59, pp. 159-164, 2.experimental method, Oct. 2000. Partial English translation. Cited in the international search report.
A. Nakamura et al.; Nihon Ceramics Kyokai, Dai 20 Kai Koon Zairyo Kiso Toronkai Koen Yoshishu, pp. 48-50, Oct. 25, 2001. Partial English translation. Cited in the international search report.
Patent Abstracts of Japan, Publication No. 05-218391, dated Aug. 27, 1993. Cited in specification.
Patent Abstracts of Japan, Publication No. 11-026888, dated Jan. 29, 1999. Cited in the specification.

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