Semiconductor variable capacitance diode with forward biasing

Details Semiconductor variable capacitance diode with forward biasing Semiconductor variable capacitance diode with forward biasing

1991-03-29

1992-03-03

Mintel, William

357 51, 357 54, H01L 2992

Patent

active

050936948

ABSTRACT:
A semiconductor variable capacitance diode comprising an insulating layer interposed between a laminated body of a first conductivity type semiconductor layer and a second type conductivity semiconductor layer and an electrode. An application of forward bias voltage to the electrode induces a variable capacitance proportional to the applied forward bias voltage.

REFERENCES:
patent: 3400310 (1968-09-01), Dorendorf et al.
patent: 3922571 (1975-11-01), Smith
patent: 4214252 (1980-07-01), Goerth
patent: 4745454 (1988-05-01), Erb
patent: 4903086 (1990-02-01), Hackley
Applied Physics Letters-vol. 2, No. 8, Apr. 15, 1972, pp. 269-271, T. Yamamoto et al., "Thin-Mis-Structure Negative-Resistance Diode".

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