Semiconductor device and method for fabricating the same

Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to nonconductive state

Reexamination Certificate

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C257SE21003, C438S281000

Reexamination Certificate

active

07915096

ABSTRACT:
A semiconductor device includes a fuse pattern formed as conductive polymer layer having a low melting point. The fuse pattern is easily cut at low temperature to improve repair efficiency. The semiconductor device includes first and second fuse connecting patterns that are separated from each other by a distance, a fuse pattern including a conductive polymer layer formed between the first and second fuse connection patterns and connecting the first and second fuse connection patterns, and a fuse box structure that exposes the fuse pattern.

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Heeger, “Nobel Lecture: Semiconducting and metallic polymers: the fourth generation of polymeric materials,”Review of Modern Physics73:681-700 (2001).
Heeger, “Plastic Electronics and Optoelectronics,”Device Research Conference Digest1:3-3 (2005).
Lee et al., “Metallic transport in polyaniline,”Nature441:65-68 (2006).

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