Method for manufacturing semiconductor device having gate electr

Details Method for manufacturing semiconductor device having gate electr Method for manufacturing semiconductor device having gate electr

1989-08-29

1990-10-30

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 34, 437 57, H01L 2178, H01L 2700

Patent

active

049668668

ABSTRACT:
Disclosed is a method for manufacturing a semiconductor device, for example, an MOSFET. According to this method, an n-well region is formed in a predetermined portion of a p-type semiconductor substrate, after which a field oxide film is formed on that portion of the n-well region which is in contact with the p-type semiconductor substrate. Next, a gate oxide film is formed on the p-type semiconductor substrate and the n-well region, and when a polycrystal silicon film is formed on the field oxide film and the gate oxide film. Thereafter, a polycrystal silicon film containing boron is formed on that portion of the above polycrystal silicon film formed on the p-channel MOSFET forming region, a polycrystal silicon film containing phosphorus being formed on that portion of the polycrystal film formed on the n-channel MOSFET forming region. The above-mentioned three polycrystal silicon films are then patterned, thereby to form a p-type gate electrode including the polycrystal silicon on the gate oxide electrode and the polycrystal silicon containing boron, and an n-type gate electrode including the polycrystal silicon film on the gate oxide electrode and the polycrystal silicon film containing phosphorus.

REFERENCES:
patent: 4463491 (1984-08-01), Goldman et al.
patent: 4555842 (1985-12-01), Levinstein et al.
patent: 4786611 (1988-11-01), Pfiester
Mieno et al., "Selected Doped Polysilicon Growth Effect of Carbon on the Selective Doped Silicon Film Growth," J. Electrochem. Soc. Solid-State Science and Technology, vol. 134, No. 11, Nov. 1987.

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