Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2008-04-15
2008-04-15
Lee, Calvin (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C438S668000
Reexamination Certificate
active
07358611
ABSTRACT:
A system and method is disclosed for adjusting the ratio of deposition times to optimize via density and via fill in an aluminum multilayer metallization process during a manufacturing process of a semiconductor wafer. In a two-step cold/hot aluminum sputtering process via fill becomes more challenging as via density increases. The invention increases the percentage of successful via fills by changing the ratio of the cold/hot deposition times. Denser via structures require extended cold deposition times to compensate for higher via density. The percentage of successful via fills was increased from forty percent (40%) to seventy percent (70%) by changing the ratio of the cold/hot deposition times from 60:40 to 79:21.
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Lee Calvin
National Semiconductor Corporation
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