Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-08-09
2011-08-09
Lam, David (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185170, C365S185180, C365S185120
Reexamination Certificate
active
07995401
ABSTRACT:
In a nonvolatile memory, less than a full block maybe erased as one or more pages. A select voltage is applied through pass transistors to each of plural selected wordlines and an unselect voltage is applied through pass transistor to each of plural unselected wordlines of a selected block. A substrate voltage is applied to the substrate of the selected block. A common select voltage may be applied to each selected wordline and the common unselect voltage may be applied to each unselected wordline. Select and unselect voltages may be applied to any of the wordlines of a select block. A page erase verify operation may be applied to a block having plural erased pages and plural nonerased pages.
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Hamilton Brook Smith & Reynolds P.C.
Lam David
Mosaid Technologies Incorporated
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