Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2011-08-09
2011-08-09
Phung, Anh (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257SE21665, C257SE27006, C365S158000, C438S003000
Reexamination Certificate
active
07994597
ABSTRACT:
The free layer in a magneto-resistive memory element is stabilized through being pinned by an antiferromagnetic layer. A control valve layer provides exchange coupling between this antiferromagnetic layer and the free layer. When writing data into the free layer, the control valve layer is heated above its curie point thereby temporarily uncoupling the free layer from said antiferromagnetic layer. Once the control valve cools, the free layer magnetization is once again pinned by the antiferromagnetic layer.
REFERENCES:
patent: 6385082 (2002-05-01), Abraham et al.
patent: 6535416 (2003-03-01), Daughton et al.
patent: 6704220 (2004-03-01), Leuschner
patent: 6744086 (2004-06-01), Daughton et al.
patent: 6771534 (2004-08-01), Stipe
patent: 6963098 (2005-11-01), Daughton et al.
patent: 7023723 (2006-04-01), Daughton et al.
patent: 7110287 (2006-09-01), Huai et al.
patent: 7148531 (2006-12-01), Daughton et al.
patent: 7177178 (2007-02-01), Daughton et al.
patent: 7230844 (2007-06-01), Deak
patent: 7266013 (2007-09-01), Daughton et al.
patent: 7309617 (2007-12-01), Ruehrig et al.
patent: 7357995 (2008-04-01), Parkin
patent: 7375405 (2008-05-01), Fukuzawa et al.
patent: 7813165 (2010-10-01), Daughton et al.
patent: 7868404 (2011-01-01), Deak
patent: 7929370 (2011-04-01), Min
patent: 2007/0063237 (2007-03-01), Huai et al.
patent: 2008/0180991 (2008-07-01), Wang
patent: 2010/0002501 (2010-01-01), Leuschner et al.
“Thermally Assisted Switching in Exchange-Biased Storage Layer Magnetic Tunnel Junctions,” by I.L. Prejbeanu et al., IEEE Transactions on Magnetics, vol. 40, No. 4, Jul. 2004, pp. 2625-2627.
Ackerman Stephen B.
Lulis Michael
MagIC Technologies, Inc.
Phung Anh
Saile Ackerman LLC
LandOfFree
MRAM with coupling valve switching does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with MRAM with coupling valve switching, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MRAM with coupling valve switching will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2750202