Semiconductor ceramic and multilayered-type semiconductor...

Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor

Reexamination Certificate

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C361S321500

Reexamination Certificate

active

07990678

ABSTRACT:
A semiconductor ceramic has a mixing molar ratio m between the Sr site and the Ti site satisfying the relationship 1.000≦m<1.020, a donor element in an amount of 0.8 to 2.0 moles relative to 100 moles of the Ti element dissolved in the Sr site to form a solid solution, the donor element having a higher valency than the Sr element, a transition metal element, such as Mn, incorporated in an amount of 0.3 to 1.0 mole relative to 100 moles of the Ti element so as to be segregated in grain boundaries, and an average grain size of crystal grains is 1.0 μm or less. A component body in which semiconductor ceramic layers are stacked and internal electrodes2are embedded provides a SrTiO3-based grain boundary insulation type semiconductor ceramic having a high apparent relative dielectric constant of 5,000 or more even if the average grain size of crystal grains is decreased to 1 μm or less, and a semiconductor ceramic capacitor in which it is possible to achieve both a reduction in layer thickness and improvement in dielectric characteristics by using the SrTiO3-based grain boundary insulation type semiconductor ceramic.

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