Nitride semiconductor light-emitting device and method for...

Details Nitride semiconductor light-emitting device and method for... Nitride semiconductor light-emitting device and method for...

2011-01-11

2011-01-11

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S190000, C257S094000, C257SE33030, C438S046000

Reexamination Certificate

active

07868350

ABSTRACT:
Provided is a nitride semiconductor light-emitting device. The device includes a buffer layer, a first conduction type semiconductor layer, an active layer, and a second conduction type semiconductor layer. The buffer layer comprises amorphous metal. The first conduction type semiconductor layer is on the buffer layer, and the active layer is on the first conduction type semiconductor layer. The second conduction type semiconductor layer is on the active layer.

REFERENCES:
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patent: 6051847 (2000-04-01), Oku et al.
patent: 6287882 (2001-09-01), Chang et al.
patent: RE38072 (2003-04-01), Kondo et al.
patent: 6624442 (2003-09-01), Kim et al.
patent: 2001/0054717 (2001-12-01), Udagawa
patent: 2003/0027099 (2003-02-01), Udagawa

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