Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2011-08-09

2011-08-09

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S404000, C438S424000

Reexamination Certificate

active

07994018

ABSTRACT:
A method for fabricating a semiconductor device is disclosed. The method includes forming a first oxide film, a nitride film, and a second oxide film on a semiconductor substrate in succession, etching the second oxide film and the nitride film to form a second oxide film pattern and a nitride film pattern, exposing a portion of the first oxide film, performing at least one nitrogen implantation into the semiconductor substrate to form a nitrogen injection region under the exposed portion of the first oxide film, forming a third oxide film over the second oxide film pattern, the nitride film pattern, and the semiconductor substrate, forming a trench that is deeper than the nitrogen ion injection region by etching the semiconductor substrate using the second oxide film pattern as a mask, and filling the trench with an oxide film to form a device isolating film.

REFERENCES:
patent: 5372950 (1994-12-01), Kim et al.
patent: 6362070 (2002-03-01), Villa et al.
patent: 6746936 (2004-06-01), Lee
patent: 6897118 (2005-05-01), Poon et al.
patent: 6939779 (2005-09-01), Takahashi
patent: 7759216 (2010-07-01), Ryu et al.
patent: 2004/0082200 (2004-04-01), Lin et al.
patent: 2008/0160720 (2008-07-01), Ryu et al.

Affiliated with

Also associated with

Rating

Method for fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2741505