Semiconductor integrated circuit and method of fabricating same

Details Semiconductor integrated circuit and method of fabricating same Semiconductor integrated circuit and method of fabricating same

2011-06-28

2011-06-28

Menz, Laura M (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C257S351000, C257S072000

Reexamination Certificate

active

07968886

ABSTRACT:
A semiconductor integrated circuit comprising thin-film transistors in each of which the second wiring is prevented from breaking at steps. A silicon nitride film is formed on gate electrodes and on gate wiring extending from the gate electrodes. Substantially triangular regions are formed out of an insulator over side surfaces of the gate electrodes and of the gate wiring. The presence of these substantially triangular side walls make milder the steps at which the second wiring goes over the gate wiring. This suppresses breakage of the second wiring.

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