Semiconductor light-emitting device, manufacturing method...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

Reexamination Certificate

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C257SE33074, C438S029000

Reexamination Certificate

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07982232

ABSTRACT:
There is provided a semiconductor light-emitting device having excellent light extraction efficiency and low wavelength unevenness, a manufacturing method thereof, and a lamp. A semiconductor light-emitting device includes an n-type semiconductor layer12, a light-emitting layer13, a p-type semiconductor layer14, and a titanium oxide-based conductive film layer15laminated in this order, wherein a random concavo-convex surface15is formed on at least a part of the surface of the titanium oxide-based conductive film layer.

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