Method for fabricating a DSDT target

Details Method for fabricating a DSDT target Method for fabricating a DSDT target

1976-12-17

1978-01-03

Lazarus, Richard B.

Metal working

Barrier layer or semiconductor device making

Barrier layer device making

29 2517, 29 2518, H01J 902

Patent

active

040658406

ABSTRACT:
A process for the fabrication of a deformographic storage display tube (DSDT) target in which a wafer of silicon or other etchable material is used (1) as a temporary support during the generation of the active region of the target and (2) as a supporting structure for the completed target. The DSDT target structure comprises a reflection layer on a dielectric layer supported in turn on a silicon or other etchable material wafer, the wafer being etched off at its back side to expose the dielectric layer while providing an outer frame support structure made of the wafer around the edge, with the dielectric layer being etched to form pillars of the dielectric on the backside of the reflection layer, whereby the dielectric pillars enable a deformation action to occur in the region between the pillars. An inner frame support structure comprised of a similarly etched wafer, a dielectric layer and a secondary electron emission layer is fitted against the bottoms of the pillars and bonded to the outer frame support structure, thereby forming the completed target.

REFERENCES:
patent: 3886310 (1975-05-01), Guldberg et al.

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