Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2011-07-26
2011-07-26
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S077000, C257S369000, C257S616000, C257SE29193
Reexamination Certificate
active
07985985
ABSTRACT:
A semiconductor device according to one embodiment includes: a semiconductor substrate; a first impurity diffusion suppression layer formed on the semiconductor substrate for suppressing diffusion of a channel impurity; an impurity channel layer formed on the first impurity diffusion suppression layer and containing the channel impurity; a second impurity diffusion suppression layer formed on the impurity channel layer for suppressing diffusion of the channel impurity; a channel layer formed on the second impurity diffusion suppression layer; a gate insulating film formed on the channel layer; and a gate electrode formed on the gate insulating film.
REFERENCES:
patent: 6426279 (2002-07-01), Huster et al.
patent: 2009/0140337 (2009-06-01), Yamazaki
patent: 2009/0325358 (2009-12-01), Koester
patent: 2000-77654 (2000-03-01), None
T. Ernst, et al., “A new Si:C epitaxial channel nMOSFET architecture with improved drivability and short-channel characteristics”, 2003 Symposium on VI SI Technology Digest of Technical Papers, 2003, 2 Pages.
Kabushiki Kaisha Toshiba
Ngo Ngan
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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