Method of programming nonvolatile memory device

Details Method of programming nonvolatile memory device Method of programming nonvolatile memory device

2011-08-02

2011-08-02

Auduong, Gene N (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185110, C365S185230

Reexamination Certificate

active

07990770

ABSTRACT:
In a method of programming a nonvolatile memory device, when a program is performed, a program voltage is applied to a first word line selected for the program. A first pass voltage is applied to three second word lines neighboring the first word line toward a source select line. First and second voltages are applied to third and fourth word lines neighboring the first word line toward the source select line. A second pass voltage is applied to the remaining word lines other than the first to fourth word lines.

REFERENCES:
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patent: 7440326 (2008-10-01), Ito
patent: 7486557 (2009-02-01), Kim et al.
patent: 2008/0055995 (2008-03-01), Ito
patent: 2009/0273983 (2009-11-01), Lee et al.
patent: 1020060115992 (2006-11-01), None
Notice of Allowance issued from Korean Intellectual Property Office on Nov. 30, 2010.

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