Method for dopant diffusion

Details Method for dopant diffusion Method for dopant diffusion

2011-06-21

2011-06-21

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257SE21357

Reexamination Certificate

active

07964435

ABSTRACT:
A method for controlling dopant diffusion is disclosed. Using certain control parameters that are not used in the prior art, the method provides an unprecedented measure of control over the dopant diffusion process. The control parameters include, among others, the size of the diffusion windows in the diffusion mask and the proximity of the diffusion windows to a dopant sink. In some embodiments, the diffusion process is conducted in an epi-reactor.

REFERENCES:
patent: 6015721 (2000-01-01), Kim
patent: 2006/0081874 (2006-04-01), Francis et al.
patent: 2006/0121683 (2006-06-01), Francis et al.
patent: 1679749 (2006-07-01), None
Liu et al.; Simple, very low dark current, planar long-wavelength avalanche photodiode; Oct. 3, 1988; Apply. Phys. Lett. 53 (14).
Chaudhari, Chandra P., “U.S. Appl. No. 12/243,488 Restriction Requirement May 3, 2010”, , Publisher; USPTO, Published in: US.
Menz, Douglas M., “U.S. Appl. No. 12/243,488 Office Action Sep. 20, 2010”, , Publisher: USPTO, Published in: US.

Affiliated with

Also associated with

Rating

Method for dopant diffusion does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for dopant diffusion, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for dopant diffusion will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2736336