Semiconductor device

Details Semiconductor device Semiconductor device

2011-01-04

2011-01-04

Riley, Shawn (Department: 2838)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Chip mounted on chip

C257S337000, C257S481000

Reexamination Certificate

active

07863756

ABSTRACT:
A non-insulated DC-DC converter has a power MOS•FET for a highside switch and a power MOS•FET for a lowside switch. In the non-insulated DC-DC converter, the power MOS•FET for the highside switch and the power MOS•FET for the lowside switch, driver circuits that control operations of these elements, respectively, and a Schottky barrier diode connected in parallel with the power MOS•FET for the lowside switch are respectively formed in four different semiconductor chips. These four semiconductor chips are housed in one package. The semiconductor chips are mounted over the same die pad. The semiconductor chips are disposed so as to approach each other.

REFERENCES:
patent: 6184585 (2001-02-01), Martinez et al.
patent: 6376909 (2002-04-01), Forbes et al.
patent: 6775164 (2004-08-01), Wong et al.
patent: 7687902 (2010-03-01), Shiraishi et al.
patent: 2001-025239 (2001-01-01), None
patent: 2002-217416 (2002-08-01), None
patent: 2004-342735 (2004-12-01), None

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