Method of forming a dielectric layer on a semiconductor...

Details Method of forming a dielectric layer on a semiconductor... Method of forming a dielectric layer on a semiconductor...

2011-08-02

2011-08-02

Mulpuri, Savitri (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

C257SE33004

Reexamination Certificate

active

07989824

ABSTRACT:
A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is formed. A first metal contact is formed on a portion of the n-type region and a second metal contact is formed on a portion of the p-type region. The first and second metal contacts are formed on a same side of the semiconductor structure. A dielectric material is disposed between the first and second metal contacts. The dielectric material is in direct contact with a portion of the semiconductor structure, a portion of the first metal contact, and a portion of the second metal contact. A planar surface is formed including a surface of the first metal contact, a surface of the second metal contact, and a surface of the dielectric material

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patent: 102007003282 (2007-01-01), None
patent: 2009020365 (2009-02-01), None

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