Solid-state imaging device

Details Solid-state imaging device Solid-state imaging device

2011-08-30

2011-08-30

Dang, Hung (Department: 2873)

Television

Camera, system and detail

Solid-state image sensor

C257S290000

Reexamination Certificate

active

08009217

ABSTRACT:
In a solid-state imaging device, provided is a solid-state imaging device in which a first gate insulation film22for the readout transistor12in a pixel is formed so as to be thicker than a second gate insulation film23for an amplification transistor14in the pixel, and the second gate insulation film23for the amplification transistor14in the pixel is formed so as to be thicker than a third gate insulation film24for an n-type micro transistor17and a p-type micro transistor18in a peripheral region outside the pixel, whereby it is possible to suppress a 1/f noise of the amplification transistor14and also possible to increase a saturated charge amount.

REFERENCES:
patent: 6674470 (2004-01-01), Tanaka et al.
patent: 2006/0202242 (2006-09-01), Takagi et al.
patent: 2007/0020796 (2007-01-01), Park
patent: 2007/0120159 (2007-05-01), Lee
patent: 2006-253316 (2006-09-01), None
patent: 2008-124229 (2008-05-01), None
patent: 2008-124395 (2008-05-01), None

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