Light emitting diode and fabrication method thereof

Details Light emitting diode and fabrication method thereof Light emitting diode and fabrication method thereof

2011-08-02

2011-08-02

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S046000, C438S047000, C257SE33025

Reexamination Certificate

active

07989235

ABSTRACT:
A light emitting diode (LED) and a method for fabricating the same, capable of improving brightness by forming a InGaN layer having a low concentration of indium, and whose lattice constant is similar to that of an active layer of the LED, is provided. The LED includes: a buffer layer disposed on a sapphire substrate; a GaN layer disposed on the buffer layer; a doped GaN layer disposed on the GaN layer; a GaN layer having indium disposed on the GaN layer; an active layer disposed on the GaN layer having indium; and a P-type GaN disposed on the active layer. Here, an empirical formula of the GaN layer having indium is given by In(x)Ga(1-x)N and a range of x is given by 0<x<2, and a thickness of the GaN layer having indium is 50-200 Å.

REFERENCES:
patent: 5103271 (1992-04-01), Tzumiya et al.
patent: 5403916 (1995-04-01), Watanabe et al.
patent: 5684309 (1997-11-01), McIntosh et al.
patent: 5741724 (1998-04-01), Ramdani et al.
patent: 5779924 (1998-07-01), Krames et al.
patent: 5851905 (1998-12-01), McIntosh et al.
patent: 6028877 (2000-02-01), Kimura
patent: 6043515 (2000-03-01), Kamiguchi et al.
patent: 6069021 (2000-05-01), Terashima et al.
patent: 6121639 (2000-09-01), Van de Walle
patent: 6153894 (2000-11-01), Udagawa
patent: 6194744 (2001-02-01), Udagawa et al.
patent: 6226355 (2001-05-01), Prins
patent: 6229834 (2001-05-01), Nisitani et al.
patent: 6266355 (2001-07-01), Sverdlov
patent: 6285696 (2001-09-01), Bour et al.
patent: 6326236 (2001-12-01), Koide et al.
patent: 6345063 (2002-02-01), Bour et al.
patent: 6388275 (2002-05-01), Kano
patent: 6479839 (2002-11-01), Nikolaev et al.
patent: 6509579 (2003-01-01), Takeya et al.
patent: 6555846 (2003-04-01), Watanabe et al.
patent: 6593595 (2003-07-01), Ono et al.
patent: 6614060 (2003-09-01), Wang et al.
patent: 6618418 (2003-09-01), Northrup et al.
patent: 6657300 (2003-12-01), Goetz et al.
patent: 6667498 (2003-12-01), Makimoto et al.
patent: 6677619 (2004-01-01), Nagahama et al.
patent: 6756245 (2004-06-01), Ohbo et al.
patent: 6838703 (2005-01-01), Yamaguchi et al.
patent: 6849881 (2005-02-01), Harle et al.
patent: 6936860 (2005-08-01), Sung et al.
patent: 6977953 (2005-12-01), Hata et al.
patent: 7042017 (2006-05-01), Yamada
patent: 7193246 (2007-03-01), Tanizawa et al.
patent: 7384807 (2008-06-01), Yoo
patent: 7700940 (2010-04-01), Sakai et al.
patent: 2002/0110945 (2002-08-01), Kuramata et al.
patent: 2002/0139984 (2002-10-01), Sugawara et al.
patent: 2003/0216011 (2003-11-01), Nakamura et al.
patent: 2004/0004223 (2004-01-01), Nagahama et al.
patent: 2004/0012014 (2004-01-01), Yamanaka et al.
patent: 2004/0051108 (2004-03-01), Nortrup
patent: 2004/0155248 (2004-08-01), Fukuda et al.
patent: 2004/0164308 (2004-08-01), Asatsuma et al.
patent: 2004/0201030 (2004-10-01), Kryliouk et al.
patent: 2004/0251471 (2004-12-01), Dwilinski et al.
patent: 2005/0167836 (2005-08-01), Tomiya et al.
patent: 2006/0289854 (2006-12-01), Harle et al.
patent: 9-266327 (1997-10-01), None
patent: 10-247744 (1998-09-01), None
patent: 10-303458 (1998-11-01), None
patent: 11-68150 (1999-03-01), None
patent: 2000-261105 (2000-09-01), None
patent: 2001-7444 (2001-01-01), None
patent: 2002-270971 (2002-09-01), None
patent: 2002-359438 (2002-12-01), None

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