Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2011-04-19
2011-04-19
Phung, Anh (Department: 2824)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C257S295000, C257SE21664, C257SE27104
Reexamination Certificate
active
07927889
ABSTRACT:
A method for manufacturing a ferroelectric memory device includes: forming a conductive base layer above a substrate; and laminating above the base layer a first electrode, a ferroelectric layer and a second electrode, wherein, prior to the step of forming the base layer, the method includes forming an active element in the substrate, forming an interlayer dielectric film on the substrate, and forming a contact plug in the interlayer dielectric film, and wherein the step of forming the base layer includes: forming a first conductive layer composed of a conductive material having a self-orienting property on the interlayer dielectric film including the contact plug; planarizing the first conductive layer by a chemical mechanical polishing method thereby forming a planarized first conductive layer that covers the interlayer dielectric film including the contact plug; applying an ammonia plasma process to a surface of the planarized first conductive layer; forming a titanium layer on the planarized first conductive layer treated with the ammonia plasma process; and heat-treating the titanium layer in a nitrogen atmosphere thereby changing the titanium layer to a titanium nitride layer which forms a second conductive layer.
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Harness & Dickey & Pierce P.L.C.
Lulis Michael
Phung Anh
Seiko Epson Corporation
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