Magnetic element utilizing free layer engineering

Details Magnetic element utilizing free layer engineering Magnetic element utilizing free layer engineering

2011-03-29

2011-03-29

Miller, Brian E (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C365S171000, C257S421000

Reexamination Certificate

active

07916433

ABSTRACT:
A method and system for providing a magnetic element are described. The method and system include providing a pinned layer, a barrier layer, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first ferromagnetic layer and the second ferromagnetic layer. The barrier layer resides between the pinned layer and the free layer and includes MgO. The first ferromagnetic layer resides between the barrier layer and the intermediate layer. The first ferromagnetic layer includes at least one of CoFeX and CoNiFeX, with X being selected from the group of B, P, Si, Nb, Zr, Hf, Ta, Ti, and being greater than zero atomic percent and not more than thirty atomic percent. The first ferromagnetic layer is ferromagnetically coupled with the second ferromagnetic layer. The intermediate layer is configured such that the first ferromagnetic layer has a first crystalline orientation and the second ferromagnetic layer has a second crystalline orientation different from the first ferromagnetic layer.

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TMR Device with World Best Performance Fabricated by Mass Manufacturing System, available @ http://www.aist.go. jp/aist—e/latest—research/2004/20040907/20040907.html, 8 pages.

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