Method for forming trench and method for fabricating...

Details Method for forming trench and method for fabricating... Method for forming trench and method for fabricating...

2011-07-19

2011-07-19

Norton, Nadine G (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S710000, C438S711000, C438S712000, C438S724000, C257S369000, C257SE21549

Reexamination Certificate

active

07981806

ABSTRACT:
A method for forming a trench includes providing a substrate, and forming the trench in the substrate using a gas containing chlorine (Cl2) gas as a main etch gas and SiFXgas as an additive gas, wherein a sidewall of the trench has a substantially vertical profile by virtue of reaction of the Cl2gas and the SiFXgas.

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