Semiconductor device and method of manufacturing same

Details Semiconductor device and method of manufacturing same Semiconductor device and method of manufacturing same

1997-03-14

1998-09-01

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257688, 257288, 257316, 257319, H01L 2348, H01L 2352, H01L 2940, H01L 2976

Patent

active

058014454

ABSTRACT:
A semiconductor device has an electrode interposed between an interlayer insulation film and a wire which is bonded thereto. A main component of the electrode is aluminum and the electrode contains fine-grained silicon in a concentration of 0.1 to 0.6 weight %. As a result, even if large ultrasonic power, a large load or the like is applied to the electrode when the wire is wire-bonded, damage such as the formation of a crack hardly generates at the interlayer insulation film. Therefore, the occurrence of defects due to the wire-bonding can be reduced.

REFERENCES:
patent: 4546374 (1985-10-01), Olsen et al.
patent: 4558345 (1985-12-01), Dwyer et al.
patent: 4984061 (1991-01-01), Matsumoto
patent: 5229646 (1993-07-01), Tsumura
patent: 5481137 (1996-01-01), Harada et al.
Silicon Precipitate Nodule-Induced Failures of MOSFETS, M. Johnson et al. Motorola, Inc., At Istfa '91: The 17th. International Symposium for Testing & Failure Analysis, 11-15 /Nov./ 1991 LA, California, USA. pp. 161-165.

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