NAND flash memory programming

Details NAND flash memory programming NAND flash memory programming

2011-07-26

2011-07-26

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S185260, C365S185280

Reexamination Certificate

active

07986563

ABSTRACT:
A method of charging a floating gate in a nonvolatile memory cell comprises bringing a substrate channel within the memory cell to a first voltage, bringing a control gate to a programming voltage, and floating the substrate channel voltage while the control gate is at the programming voltage. Memory devices include state machines or controllers operable to perform the described method, and operation of such a state machine, memory device, and information handling system are described.

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patent: WO-2008027409 (2008-03-01), None

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