Semiconductor memory device having internal voltage...

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

Reexamination Certificate

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C327S541000, C327S543000

Reexamination Certificate

active

07986180

ABSTRACT:
Embodiments of the present invention are directed to provide an internal voltage generator of a semiconductor memory device for generating a predetermined stable level of an internal voltage. The semiconductor memory device includes a control signal generator, an internal voltage generator and an internal voltage compensator. The control signal generator generates a reference signal and a compensating signal which are corresponding to voltage level of the reference signal. The internal voltage generator generates an internal voltage in response to the reference signal. The internal voltage compensator compensates the internal voltage in response to the compensating signal.

REFERENCES:
patent: 5319302 (1994-06-01), Koshikawa et al.
patent: 5585741 (1996-12-01), Jordan
patent: 6194887 (2001-02-01), Tsukada
patent: 6300749 (2001-10-01), Castelli et al.
patent: 6791308 (2004-09-01), Shim
patent: 7576596 (2009-08-01), Lee et al.
patent: 7602161 (2009-10-01), McLeod

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