Group III nitride semiconductor element and epitaxial wafer

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C372S043010

Reexamination Certificate

active

07873088

ABSTRACT:
A primary surface23aof a supporting base23of a light-emitting diode21atilts by an off-angle of 10 degrees or more and less than 80 degrees from the c-plane. A semiconductor stack25aincludes an active layer having an emission peak in a wavelength range from 400 nm to 550 nm. The tilt angle “A” between the (0001) plane (the reference plane SR3shown in FIG.5) of the GaN supporting base and the (0001) plane of a buffer layer33ais 0.05 degree or more and 2 degrees or less. The tilt angle “B” between the (0001) plane of the GaN supporting base (the reference plane SR4shown in FIG.5) and the (0001) plane of a well layer37ais 0.05 degree or more and 2 degrees or less. The tilt angles “A” and “B” are formed in respective directions opposite to each other with reference to the c-plane of the GaN supporting base.

REFERENCES:
patent: 6165812 (2000-12-01), Ishibashi et al.
patent: 6653663 (2003-11-01), Ishida
patent: 2001/0030328 (2001-10-01), Ishida
patent: 2003/0132508 (2003-07-01), Ishida
patent: 2003/0205783 (2003-11-01), Ishida
patent: 2007/0164292 (2007-07-01), Okuyama
patent: 09-180998 (1997-07-01), None
patent: 10-135576 (1998-05-01), None
patent: 11-220223 (1999-08-01), None
patent: 11-354846 (1999-12-01), None
patent: 2001-230497 (2001-08-01), None
patent: 2002-016000 (2002-01-01), None
patent: 2002-344089 (2002-11-01), None
patent: 2003-112999 (2003-04-01), None
patent: 2005-277254 (2005-10-01), None
patent: 2007-189135 (2007-07-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Group III nitride semiconductor element and epitaxial wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Group III nitride semiconductor element and epitaxial wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Group III nitride semiconductor element and epitaxial wafer will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2721881

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.