Semiconductor device having improved heat sink

Details Semiconductor device having improved heat sink Semiconductor device having improved heat sink

2011-01-25

2011-01-25

Pizarro, Marcos D. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

C257S711000, C257S712000, C257S723000, C257S724000, C257S725000, C257S730000, C257SE23101

Reexamination Certificate

active

07875971

ABSTRACT:
The semiconductor device includes a substrate, a first semiconductor element, a second semiconductor element, a first heat sink and a second heat sink. The first and the second semiconductor elements are provided on the substrate. The maximum power consumption of the first semiconductor element is lower than that of the second semiconductor element. The first heat sink is fixed to the first semiconductor element. The second heat sink is fixed to the second semiconductor element. The first heat sink is spaced apart from the second heat sink.

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patent: 2006-147852 (2006-06-01), None

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