Method of manufacturing a semiconductor laser

Details Method of manufacturing a semiconductor laser Method of manufacturing a semiconductor laser

1990-09-21

1992-03-03

Kunemund, Robert

Fishing, trapping, and vermin destroying

156611, 156647, 156649, 372 46, 437 90, 437105, 437133, 437936, 148DIG26, 148DIG51, 148DIG95, 148DIG119, 148DIG169, H01L 3300

Patent

active

050932780

ABSTRACT:
According to this invention, a first cladding layer of a first conductivity type, an active layer, a second cladding layer of a second conductivity type, and a cap layer much more susceptible to side etching than the second cladding layer susceptible to side etching than the second cladding layer are sequentially grown on a (100) crystal plane of a semiconductor substrate of the first conductivity type, and a stripe-like mask extending in a <011> direction is formed on the grown substrate with respect to each layer of the stacked substrate. This etching is performed in a crystal orientation for forming a reverse triangular mesa. However, since the cap layer is made of a material susceptible to side etching, a rounded mesa is formed. Thereafter, when a burying layer is formed on the etched portion by a vapor phase epitaxy method, the burying layer can be made to have a flat surface depending on crystal orientations.

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